ssf6010g 60v n-channel mosfet www.goodark.com page 1 of 7 rev.1.1 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 64 i d @ tc = 100c continuous drain current, v gs @ 10v 45 i dm pulsed drain current 300 a power dissipation 91 w p d @tc = 25c linear derating factor 0.61 w/c v ds drain-source voltage 60 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 160 mj i as avalanche current @ l=0.3mh 32.6 a t j t stg operating junction and storage temperature range -55 to +175 c v dss 60v r ds (on) 8.3m (typ.) i d 64a to-251 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
ssf6010g 60v n-channel mosfet www.goodark.com page 2 of 7 rev.1.1 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 1.64 /w r ja junction-to-ambient (t 10s) 110 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 250a 8.3 10 v gs =10v,i d = 30a r ds(on) static drain-to-source on-resistance 15.6 m t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.35 v t j = 125 1 v ds = 60v,v gs = 0v i dss drain-to-source leakage current 10 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 49 q gs gate-to-source charge 11 q gd gate-to-drain("miller") charge 20 nc i d = 37a, v ds =44v, v gs = 10v t d(on) turn-on delay time 13 t r rise time 12 t d(off) turn-off delay time 32 t f fall time 8.4 ns v gs =10v, v ds =30v, r l =15, r gen =2.5 i d =2a c iss input capacitance 2048 c oss output capacitance 218 c rss reverse transfer capacitance 162 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 64 a i sm pulsed source current (body diode) 300 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.2 v i s =30a, v gs =0v t rr reverse recovery time 25 ns q rr reverse recovery charge 24 nc t j = 25c, i f =37a, di/dt = 100a/s
ssf6010g 60v n-channel mosfet www.goodark.com page 3 of 7 rev.1.1 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
ssf6010g 60v n-channel mosfet www.goodark.com page 4 of 7 rev.1.1 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
ssf6010g 60v n-channel mosfet www.goodark.com page 5 of 7 rev.1.1 typical electrical and thermal characteristics figure7. maximum effective transient thermal impedance, junction-to-case figure 6.typical capacitance vs. drain-to-source voltage figure 5. maximum drain current vs. case temperature
ssf6010g 60v n-channel mosfet www.goodark.com page 6 of 7 rev.1.1 mechanical data min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a2 0.970 1.070 1.170 0.038 0.042 0.046 b 0.720 0.780 0.850 0.028 0.031 0.033 b1 0.710 0.760 0.810 0.028 0.030 0.032 b3 5.230 5.330 5.460 0.206 0.210 0.215 c 0.470 0.530 0.580 0.019 0.021 0.023 c1 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 4.700 4.830 4.920 0.185 0.190 0.194 e h 16.100 16.400 16.600 0.634 0.646 0.654 l1 9.200 9.400 9.600 0.362 0.370 0.378 l3 0.900 1.020 1.250 0.035 0.040 0.049 l5 1.700 1.800 1.900 0.067 0.071 0.075 1 5 o 7 o 9 o 5 o 7 o 9 o 2 5 o 7 o 9 o 5 o 7 o 9 o g 0.000 0.076 0.000 0.000 0.003 g1 0.000 0.076 0.000 0.000 0.003 symbol dimension in millimeters dimension in inches 5.300ref 0.209ref 0.090bsc2.286bsc to-251 package outline dimension
ssf6010g 60v n-channel mosfet www.goodark.com page 7 of 7 rev.1.1 ordering and marking information device marking: ssf6010g package (available) to-251(ipak) operating temperature range c : -55 to 175 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-251 80 60 4800 5 24000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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